Semiconductor device bonding strength test

Wire bonding is a key process in the packaging process. The quality of bonding is directly related to the performance and reliability of the entire packaged device. About 1/4 to 1/3 of the failures of semiconductor devices are caused by chip interconnection, so chip interconnection has a great impact on the long-term reliability of the device.
Wire bonding technology also directly affects the overall thickness of the package. The purpose of the bonding strength test of semiconductor devices is to measure the bonding strength or determine whether the bonding strength meets the specified requirements. It is applicable to semiconductor devices (discrete devices and integrated circuits).
Zhongke Testing Environmental Reliability Experiment Center has various mechanical and climatic testing equipment for semiconductor devices, has bonding strength testing capabilities, and provides professional bonding strength testing services for semiconductor devices and equipment.

Method A and Method B: Test the bonding strength inside the device by directly applying tension to the inner lead;
Method C: For bonding outside the device, applying pull-off stress between the lead or terminal and the wiring board or substrate;
Method D: For internal bonding, applying shear stress between chip and substrate or to similar surface bonding structures;
Method E and Method F: Used for external bonding to apply push-away or pull-away stress between the chip and substrate;
Method G: Used to test the strength of wire bonds against shear forces.

GB/T 4937.1-2006 Mechanical and climatic test methods for semiconductor devices Part 1: General
IEC 60749-22: 2002 Mechanical and climatic test methods for semiconductor devices Part 22: Bond strength
GB/T 4937.22-2018 Mechanical and climatic test methods for semiconductor devices Part 22: Bonding strength